., lf nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 repetitive avalanche and dv/dt rated hexfet?transistors thru-hole (to-204aa/ae) IRF054 60v, n-channel product summary part number IRF054 bvdss 60v rds(on) 0.022q id 45a* the hexfet transistors also feature all of the well estab- lished advantages of mosfets such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. features: ? repetitive avalanche ratings ? dynamic dv/dt rating ? hermetically sealed ? simple drive requirements ? ease of paralleling absolute maximum ratings id @ vgs = ov, tc = 25c id @ vgs -ov, tc = iooc idm pd @ tc = 25c vgs eas iar ear dv/dt tj tstg parameter continuous drain current continuous drain current pulsed drain current (d max. power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy ? avalanche current cd repetitive avalanche energy cd peak diode recovery dv/dt IRF054 electrical characteristics @ tj = 25c (unless otherwise specified) bvdss abvdss/atj rds(on) vqs(th) gfs idss igss igss qg ugs ed td(on) tr tfloft) tf ls + ld ciss coss crss parameter drain-to-source breakdown voltage temperature coefficient of breakdown voltage static drain-to-source on-state resistance gate threshold voltage forward transconductance zero gate voltage drain current gate-to-source leakage forward gate-to-source leakage reverse total gate charge gate-to-source charge gate-to-drain ('miller') charge turn-on delay time rise time turn-off delay time fall time total inductance input capacitance output capacitance reverse transfer capacitance min 60 ? ? 2.0 20 ? ? ? 80 20 34 ? ? ? ? ? typ ? 0,68 ? ? - ? ? -- ? -- ? ? 6.1 4600 2000 340 max 0.022 0.025 4.0 ? 25 250 100 -100 180 4i 105 33 180 100 100 ? units v we i v s(j5) ua na nc n s nh pf test conditions vgs^ov, id- i.oma reference to 25c, id = 1.0ma vgs= 10v, io = 31a? vgs = iov, id =45 a? vds = vgs, id =250na vds> 15v, ids = 31a? vds=48v,vgs=ov vds = 48v vgs = 0v, tj - 125c vgs -= 2ov vgs = -2ov vgs=10v, 1d-45a vds = 3ov vdd =3ov, id =45a, rg =2.350 measured from drain lead (6mm/0.25in. from package) to source lead (f?mm/0.25izi. from package) vqs = ov,vds = 25v f = l.omhz source-drain diode ratings and characteristics is ism vsd trr qrr 'on parameter continuous source current (body diode) pulse source current (body diode) ? diode forward voltage reverse recovery time reverse recovery charge forward turn-on time min ? ? ? ? typ ? ? ? ? max 45* 220 2.5 280 2.2 units a v ns uc test conditions tj = 25c, is = 45a, vgs = 0v ? tj - 25c, if = 45 a, di/dt < looa/ns vdd s sov ? intrinsic turn-on time is negligible. turn-on speed is substantially controlled by ls + ld. "current limited by pin diameter. thermal resistance rthjc rthja parameter junction to case junction to ambient min ? ? typ ? max 0.83 30 units c/w test conditions typical socket mount
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